inchange semiconductor isc product specification isc silicon npn power transistor bd943f/945f/947f description dc current gain- : h fe = 85(min)@ i c = 500ma complement to type bd944f/946f/948f applications designed for use in audio output stages and general purpose amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit bd943f 22 BD945F 32 v cbo collector-base voltage bd947f 45 v bd943f 22 BD945F 32 v ceo collector-emitter voltage bd947f 45 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 22 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 7.93 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor bd943f/945f/947f electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bd943f 22 BD945F 32 v ceo(sus) collector-emitter sustaining voltage bd947f i c = 100ma ; i b = 0 45 v bd943f/945f i c = 2a; i b = 0.2a b 0.5 v ce( sat ) collector-emitter saturation voltage bd947f i c = 3a; i b = 0.3a b 0.7 v bd943f/945f i c = 2a; v ce = 1v 1.1 v be( on ) base-emitter on voltage bd947f i c = 3a; v ce = 1v 1.3 v i cbo collector cutoff current v cb = v cbomax ; i e = 0 v cb = v cbomax ; i e = 0,t j =150 0.05 1 ma bd943f v ce = 15v; i b = 0 b BD945F v ce = 20v; i b = 0 b i ceo collector cutoff current bd947f v ce = 25v; i b = 0 b 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.2 ma h fe-1 dc current gain i c = 10ma ; v ce = 5v 25 h fe-2 dc current gain i c = 500ma ; v ce = 1v 85 475 bd943f/945f 50 h fe-3 dc current gain bd947f i c = 2a ; v ce = 1v 40 h fe-4 dc current gain-- only for bd947f i c = 3a ; v ce = 1v 30 f t current-gain?bandwidth product i c = 250ma ; v ce = 1v 3 mhz isc website www.iscsemi.cn 2
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